Optically detected ESR and ENDOR experiments in p-type GaAs under photoexcitation show that an arsenic-anti-site-As-interstitial complex has energy levels E v +0.52 eV (As Ga + 2+/-As I ) and E v +0.74 eV (As Ga 0 +/-As I ). From the occupied As Ga 0 +/-As I level an absorption band starts peaking at 1.2 eV. From the investigation of the photoquenching behaviour and metastability of the As Ga + -As I pair is concluded that the diamagnetic As Ga -As I complex can be associated with EL2.
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Meyer et al. (1987) studied this question.
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