On the prospect of as-grown semi-insulating InP: ODMR of the PInantisite

ODMR investigations of e-irradiated InP:Zn show that the P In antisite resonance is associated with emission at 0.89 eV. The authors assign this recombination process to the capture of the second electron at the P In 4+ centre. In analogy with GaAs where the EL2 centre pins the Fermi level at mid-gap, they propose that the P In 3+ (D 1 0 ) level at (E c -0.89 eV) should allow as grown semi-insulating InP to be prepared by off-stoichiometric growth.