Fast transimpedance switching burst‐mode CMOS optical receiver

This work shows that the performance of optical receivers designed in silicon deep‐sub‐micron CMOS technologies competes successfully with more expensive SiGe‐BiCMOS receivers in data rate and sensitivity. In burst‐mode applications of passive optical networks, the transimpedance of the low‐noise amplifier has to be switched very fast requiring, the exclusion of oscillations. To meet the burst‐mode requirements, our design for 2.5 G bit/s in 120 nm CMOS offers a fast switching of the transimpedance within 3 ns and proves a low‐distortion signal detection.