Tunnelling processes in thin double-barrier GaAs/AlAs diodes have been studied under hydrostatic pressure. Gamma -X tunnelling strongly influences the current-voltage (I-V) characteristics of samples having barriers ten monolayers thick. Non-resonant tunnelling through transverse X valleys predominates at T=300 K, whereas at low temperature it proceeds by longitudinal X valleys. Indirect Gamma -X tunnelling is found to be inversely proportional to barrier thickness. The I-V characteristics of samples having barriers six and five monolayers thick are controlled by elastic Gamma - Gamma tunnelling. It is shown that extremely thin barrier thicknesses do not necessarily imply better electrical features.
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Diniz et al. (1993) studied this question.
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