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June 1, 1986Journal of Applied Physics

Current–voltage characteristics through GaAs/AlGaAs/GaAs heterobarriers grown by metalorganic chemical vapor deposition

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Authors

IHI. HaseSony (Taiwan)HKH. KawaiNihon Dempa Kogyo (Japan)KKK. KanekoJapan Atomic Energy Agency

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Hase et al. (1986) studied this question.

synapsesocial.com/papers/6a10a1f3d478ddac0ffd5026https://doi.org/10.1063/1.336768
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Also Consider

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  1. 1Electron transport through the MOCVD grown GaAs/AlGaAs/GaAs heterojunction barrier1984 · 15 citations
  2. 2Charge-transfer analogue-to-digital convertor1976 · 2 citations
  3. 3Tunnelling through GaAs-Al x Ga 1− x As-GaAs double heterojunctions1982 · 27 citations