The dynamics of recombination of photoionized shallow impurities is investigated on a nanosecond time scale, by monitoring the photoconductive decay of high-purity n -InP illuminated with fast, high-power far-infrared pulses. The classical rate equation is found to break down due to the population and impact ionization of excited states. At higher carrier densities and bias electric fields Auger-like recombination is found to strongly affect the decay process.
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Rikken et al. (1988) studied this question.
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