The infrared Faraday rotation due to hot carriers in a compensated nonpolar semiconductor in the presence of shallow attractive traps is investigated. The calculations are carried out for a parabolic law of dispersion and a scalar effective mass. Numerical calculations are made for n- Ge at 4.2 K. The results are useful for the estimation of the degree of compensation in the material and the capture parameter of the trapping centers which control the lifetime of the non-equilibrium carriers.
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Khan et al. (1982) studied this question.
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