Si Kα X-Ray Spectrum Produced by 30-MeV Oxygen Bombardment

Kα x-rays of Si were produced by 30-MeV oxygen bombardment on a Si wafer. Nine Kα lines are observed with an energy resolution of 2.5 eV at energies of 1739.78 (Kα1,2), 1750.8 ±{} 0.5 (Kα₃), 1753.1 ±{} 0.6 (Kα₄), 1762.6 ±{} 0.5 (Kα₅), 1766.4 ±{} 0.6 (Kα₆), 1775.3 ±{} 0.6, 1778.8 ±{} 0.5, 1794.2 ±{} 0.6, and 1809.7 ±{} 0.8 eV. The intensity pattern is very nearly symmetric and the envelope approximately Gaussian. The energies of these lines are found to agree with Hartree-Fock-Slater calculated energies for Kα transitions from Si atoms with initial configurations (1s)^-1(2p)^-n for n=0, 1, 2, 3, 4, and 5.