Evidence of orientation independence of band offset in AlGaAs/GaAs heterostructures

The valence-band offset between GaAs and AlGaAs has been found to be independent of crystal orientation, as deduced from measurements of the two-dimensional hole densities in Al0.26{Ga}0.74$As/GaAs heterojunctions. An analysis of the charge transfer yields a valence-band offset of 0.39±{}0.02 of the energy-gap difference.