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November 15, 1980Journal of the Physical Society of Japan

Theory of Electronic Properties in N-Channel Inversion Layers on Narrow-Gap Semiconductors I. Subband Structure of InSb

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YTYasutami TakadaThe University of TokyoKAKunihiro AraiNTT (Japan)NUNaoyuki UchimuraTokyo University of Science

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Takada et al. (1980) studied this question.

synapsesocial.com/papers/6a92cbbf915bce628c4f5d2ehttps://doi.org/10.1143/jpsj.49.1851
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Also Consider

Synapse has enriched 3 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Magnetoconductance Oscillations of n -Type Inversion Layers in InSb Surfaces1972 · 53 citations
  2. 2Subband Structures of N-Channel Inversion Layers on III–V Compounds –A Possibility of the Gate Controlled Gunn Effect–1977 · 55 citations
  3. 3Quantized Surface States of a Narrow-Gap Semiconductor1974 · 198 citations