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We have investigated the far-infrared (FIR) photoresponse of the magnetoresistance of the quasi-one-dimensional electron systems in AlGaAs/GaAs split-gate single quantum wire (QWR) structures. It was found that the QWR structures exhibit photoinduced resistance change due to resonant FIR absorption between the magnetoelectric subbands. From a spectroscopic analysis based on the generalized Kohn's theorem, the lateral bare confinement potential, V b, in the split-gate QWR structures has been determined directly. The V b obtained is in good agreement with a theoretical prediction based on simple electrostatics, indicating that FIR spectroscopy is a suitable tool for characterizing the electronic structures in quantum wire structures.
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Wang et al. (1996) studied this question.
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