Gas-Sensitive Schottky Gated Field Effect Transistors Utilizing Poly(3-alkylthiophene) Films

The gas sensitivity of Schottky gated poly(3-alkylthiophene) field effect transistors has been reported. The source-drain currents have been strongly influenced by air, water and chloroform gases. A large increase in transconductance of the (field effect transistor) FET is observed in chloroform gas. This is explained by the increase of the mobility with diffusion of chloroform molecules into the poly(3-alkylthiophene) films.