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Effects of nitric oxide (NO) and nitrous oxide (N2O) annealing on 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) fabricated on the (0001), (0001̅), and (112̅0) faces are investigated. MOSFETs on (112̅0) exhibited high channel mobility (108 cm2/V·s) compared to those on (0001) (29-37 cm2/V·s) and (0001̅) (39-46 cm2/V·s). The MOSFET characteristics are discussed in terms of oxidation taking place during the nitridation annealing and crystal faces.
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Nanen et al. (2013) studied this question.
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