Quantum dot/carbon nanotube/silicon double heterojunctions for multi-band room temperature infrared detection

We report on the observation of room temperature multi-band photocurrent response from a novel structure formed by interior loading of PbS quantum dots into carbon nanotubes grown on silicon. In addition to a mid infrared photoresponse band at ∼ 0.22 eV due to the carbon nanotubes and one band at 1.1 eV corresponding to silicon, two bands in the mid/near infrared at 0.63 and 0.82 eV, corresponding to the first and second exciton bands of the PbS quantum dots, are observed in photocurrents measured at room temperature, in uncooled operation. We have also observed a red shift of the 0.63 and 0.82 eV bands with cooling that reflects a behavior typical for PbS and supports the hypothesis that these photoresponse bands are due to absorption in the PbS quantum dots.