The width of the spin resonance of conduction electrons in n-type silicon, which is related to the spin-lattice relaxation time, has been measured at microwave frequencies, between helium and room temperature. There are two temperature regions of interest: (i) above about 50 °K scattering by lattice vibrations is the dominant relaxation mechanism, and the results are compared with existing theories due to Elliott and Yafet, and (ii) at lower temperatures the results are considered in the light of existing theories of scattering from ionized donor impurities.
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Lancaster et al. (1964) studied this question.
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