A remarkable change of the photoluminescence (PL) intensity with the variation of the dc bias voltage is observed in Au/n-InP Schottky surface. It is found from the observation of the surface band bending that the PL intensity is dominantly affected by the surface space-charge layer. The maximum PL intensity is found to be attained at the flat-band bias condition.
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Ando et al. (1980) studied this question.
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