Pulse-excited response of the electroluminescence and its concentration dependence of luminescent center have been investigated in order to clarify the electroluminescent mechanism of Au/ZnSe: Mn/n-GaAs heterostructure cell. The best record obtained from ZnSe: Mn phosphor film cell shows 31 mlm/W in luminous efficiency and 230 fL in brightness under the dc excitation condition of 20 V and 10 mA. The relaxation time is estimated from brightness wave forms to be 17.5 µs for Mn-F complex center, while that of Mn2+ ion center varies from 140 to 20 µs with increase of Mn content. The experimental data show that two processes exist of a carrier injection through the interface states and the electron flowing over the heterojunction barrier.
No takes yet. Share an insight, caveat, or question.
Ohnishi et al. (1980) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: