Thin Film DC EL Cell of Au/ZnSe: Mn/n-GaAs Hetero-Structure with the Threshold Voltage of 20 V

The threshold voltage in a thin film electroluminescent cell (EL cell) has been reduced remarkably by the use of a heterojunction contact of n -GaAs to ZnSe as an efficient electron injector electrode. The typical driving performance of the cell having Au/ZnSe: Mn/ n -GaAs structure obtained is 200 fL in brightness at the dc mode operation of 20.4 V and 7 mA and about 10 -5 W/W in power conversion efficiency. A series of technical data on the fabrication technology of the EL cell and experimental results for the characterizations of emission mechanism are presented. The measurements of current wave form verify that the electrons are injected into ZnSe: Mn phosphor film from n -GaAs over the heterojunction barrier.