Measurements of the energy absorbed in pulsed-laser annealing of Si and Al are consistent with annealing by thermal processes and directly yield the absorption coefficients in both the solid and liquid phases. For semiconductors, the technique described further permits measurement of the time during the laser pulse at which melting occurs which, when used in conjunction with the energy absorbed in the solid and liquid phases, allows critical evaluation of theoretical models for the annealing process.
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Peercy et al. (1982) studied this question.
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