Evidence for the oxygen incorporation into silicon during surface melting by the pulsed-laser irradiation is presented. SIMS measurement of 18O in Si samples which were laser-irradiated in 18O2 atmosphere shows that 18O is introduced in Si with the maximum concentration 7×1020 cm-3 and the penetration depth 1.4 µm. The incorporation of 18O is blocked when the Si surface is covered with SiO2.
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Hoh et al. (1980) studied this question.
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