Two-stage laser annealing of lattice disorder in phosphorus implanted silicon

Q-switched ruby laser is used to anneal phosphorus implanted 〈100〉 silicon wafers. Residual lattice disorder is analyzed by combined TEM and backscattering techniques. Different kinds and densities of residual damage can be observed as a function of the laser pulse energy density. Two annealing stages are observed for energy densities below and above 1.5 J/cm2. Above this threshold a very good annealing takes place leading to the formation of an almost perfect single crystal.