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July 15, 1976Applied Physics Letters

Regrowth behavior of ion-implanted amorphous layers on 〈111〉 silicon

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Authors

LCL. CsepregiFraunhofer SocietyJMJ. W. MayerON Semiconductor (United States)TST. W. SigmonUniversity of New Mexico

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Csepregi et al. (1976) studied this question.

synapsesocial.com/papers/6a83bd00fd07e211f9fe1ae7https://doi.org/10.1063/1.88980
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  2. 2The Influence of the Amorphous Phase on Ion Distributions and Annealing Behavior of Group III and Group V Ions Implanted into Silicon1971 · 124 citations