We report for the first time the occurrence of light-induced ferromagnetic order in the III-V-based diluted magnetic semiconductor heterostructures (In,Mn)As/GaSb. We believe that the phenomenon is based on the generation of excess carriers (holes) in the (In,Mn)As layer by the irradiation of light, which enhances a carrier-mediated ferromagnetic interaction between Mn ions.
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Munekata et al. (1997) studied this question.
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