Draw Spinning of Wafer‐Scale Oxide Fibers for Electronic Devices

The fabrication of functionalized 1D oxide fibers with accurate control of orientation, location, and number is highly demanded and challengeable based on current techniques, which hinder their practical application in opto/electronic devices. Herein, a rapid and simple method is developed to directly draw the oxide fibers from its polymer solution over large area. The draw‐spinning method enables the accurate positioning of individual fiber and the construction of complex patterns, holding great potentials in fiber‐based electronics. The assembled field‐effect transistors (FETs) based on single indium oxide (In2O3) fiber exhibit excellent current modulation capability with a high on/off current ratio of 106. Adjusting the number of fibers within the channel, the device performance can be modulated. Moreover, the draw‐spinning technique is applied to fabricate highly aligned fiber arrays by using brush pen. The FETs based on aligned In2O3 fiber arrays exhibit superior current‐driven capability compared with the devices with limited number of fibers. Their further integrations on high‐permittivity dielectric layer show improved device performance at an operating voltage of 4 V. This method is scalable and can be implemented easily to fabricate various functional fibers in both laboratory and industrial manufacturing.