Implantation and PH 3 Ambient Annealing of InP

layers have been annealed using the same phosphorus ambient conditions as would be encountered during the material's vapor phase epitaxial growth. Implanted layers so annealed exhibit sheet carrier concentrations up to with the n‐type silicon ion and approximately 10 14 cm −2 with the p‐type Mg ion. No indication of outdiffusion is seen on layers that have been profiled. Though the annealing was undertaken in an epitaxial reactor, it is envisioned that a much simplified system would also suffice. The present approach provides an alternative to the more customary dielectric encapsulation whose effectiveness is often impaired by deposition variations.