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Low-energy electron irradiation causes damage in single-walled carbon nanotubes and changes the electric behavior of a nanotube field-effect transistor from metallic to semiconducting at low temperature. The irradiation damage was found to form an energy barrier of several 10meV in the nanotube channel. We show that the transition behavior can be reasonably explained by the barrier formation and gate-induced band bending.
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Kanzaki et al. (2007) studied this question.
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