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This paper studies the chemical and field effect passivation properties of silicon surfaces by thin hafnium oxide(HfO₂)and aluminum oxide(Al₂O₃)layers grown by chemical-vapor-based atomic layer deposition method. Using a rigorous metal–oxide–semiconductor model and results from capacitance–voltage measurements, the density of fixed charges(Nf)and the density of interface traps(Dᵢₜ)at theHfO₂/SiandAl₂O₃/Siinterfaces were obtained. Microwave photoconductivity decay measurements were used to characterize interface recombination velocities at these interfaces.
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Wang et al. (2012) studied this question.
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