We report measurements of the two-photon absorption coefficient of GaAs optical waveguide structures at 1.06 μm. We show that for pulse lengths longer than ∼1 ps, light-induced index changes sufficient to induce all-optical switching will be predominantly due to carriers generated by two-photon absorption. These results allow us to predict limitations for ultrafast all-optical GaAs devices.
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Aitchison et al. (1990) studied this question.
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