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Field emission properties of boron–nitride (BN) films synthesized by plasma-assisted chemical vapor deposition are investigated. There appears a hysteresis of the field emission characteristic for as-grown BN films. It is found that the hysteresis is suppressed for the BN films treated with O2 plasma. Moreover, no significant degradation of the field emission characteristics occurs although a slight generation of B2O3 is detected at the BN surface by O2 plasma treatment.
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Sugino et al. (1999) studied this question.
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