Study of defects in wide band gap semiconductors by electron paramagnetic resonance

Defects in diamond, baron nitride and gallium nitride, grown by various deposition methods, were investigated by EPR measurements. In diamond films the observed EPR signal has a g value of 2.0028, peak-to-peak linewidth of 3–5 Gauss and spin-lattice relaxation time, at 293 K, of 10-6 s. In boron nitride films, depending on growth conditions, the g value varies from 2.0024 to 2.0032, the peak-to-peak linewidth varies from 31 to 7 Gauss and the spin-lattice relaxation time at 293 K varies from 10-5 to 10-6 s. An EPR signal has not been observed in GaN films at temperatures above 100 K.