Cs is shown to give positive surface charge, which has great stability against temperature-bias stressing. Cs ions are first introduced into Si surfaces by ion implantation, then the surface layer is converted into SiO2 by thermal oxidation. Surface charge can be well localized by masking. Its magnitude depends on the number of implanted ions, on oxidation time, and temperature.
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Sixt et al. (1971) studied this question.
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