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On (110) GaAs surfaces cleaved in ultrahigh vacuum the changes of the ellipsometric angles δψ and δΔ induced by oxygen adsorption have been measured for photon energies 1.5<ω<3.5 eV. The main spectral structure is explained as due to the Franz-Keldysh effect at critical points of the bulk band structure induced by a change of the band bending. From a comparison with electroreflectance data information can be obtained about band-bending changes and about surface states.
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Dorn et al. (1974) studied this question.
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