Studies of Neutron-Produced Defects in Silicon by Deep-Level Transient Spectroscopy

Majority-carrier traps produced in silicon by fast neutron irradiation were studied by the deep-level transient spectroscopy (DLTS). The measurement technique of the DLTS was developed, which was similar to that using a lock-in amplifier, but had some advantages over it. Three electron traps (E1, E2 and E3) and two hole traps (H1 and H2) were observed in fast-neutron-irradiated n - and p -type silicon, respectively. The energy levels and majority-carrier capture cross sections for these traps were determined. The introduction rates of E1 ( E c -0.15 eV), E2 ( E c -0.21 eV), E3 ( E c -0.39 eV), H1 ( E v +0.15 eV) and H2 ( E v +0.34 eV) were 4.7, 1.4, 3.2, 1.8 and 5.5 cm -1 , respectively. Comparison with other published data was also made.