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The near edge structure up to 30 eV above the ionisation threshold of inner shell edges can be interpreted either as the result of interference of waves scattered from neighbouring atoms or in terms of the local projected conduction band density of states. Methods of calculating near edge structure based on both these viewpoints will be discussed and applications to the near edge structures observed in semiconductors and insulators reviewed. Particular emphasis will be given to those cases where the calculations lead to a simple interpretation of near edge structure.
Rez et al. (1991) studied this question.
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