A new method for directly measuring diffusion coefficients transverse to a high electric field has been applied to electrons in silicon at 300°K. For fields ranging up to 24 kV/cm, the transverse diffusion coefficient, as measured and determined by Monte Carlo calculation, indicates a drop from the zero field value D0 to approximately D0/2. The present results are subject to some uncertainty, but improved resolution appears to be attainable with maximum use of present technology.
No takes yet. Share an insight, caveat, or question.
Bartelink et al. (1970) studied this question.
Synapse has enriched 2 closely related papers on similar clinical questions. Consider them for comparative context: