Role of atomic tellurium in the growth kinetics of CdTe (111) homoepitaxy

Very high surface temperature can be reached by exposing CdTe to intense laser radiation. Under this condition, the evaporation is dissociative to form a mixture of Cd, Te, and Te2. The fraction of atomic Te can be varied by changing the laser power, thus allowing a systematic elucidation on the role of atomic Te in the growth kinetics of (111) CdTe homoepitaxy. In comparison with Te molecules, the use of Te atoms improves the surface morphology of layers grown on the (111)A face and enhances the growth rate on both the (111)A and (111)B faces. Results suggest that the atomic Te is more reactive.