X-ray imaging with a charge-coupled device fabricated on a high-resistivity silicon substrate

In this letter results are reported on x-ray imaging experiments performed with a buried channel charge-coupled-device line array optimized for photon sensing in the 1–10-keV range. Optimization was achieved by increasing the depletion depth of the device to 254 μ. A near-unity detector quantum efficiency (98%) was thus achieved. There was no observable image blurring due to diffusive spreading of signal charge as a result of the field-assisted transport to the well minima.