Natural PbS crystals were exposed to various pressures of sulfur-vapor near 500^∘{}C and then quenched. Calculations based on the penetration of p-n junctions gave an interdiffusion constant of 2×{}10^-6 cm²/sec at 550^∘{}C. The temperature dependence of the Hall coefficient and resistivity for several treated crystals was determined. A forbidden energy gap of 0.37±{}0.01 ev and an electron to hole mobility ratio of 1.4 was obtained.
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Brebrick et al. (1954) studied this question.