Single crystals of lead telluride, , have been prepared and their resistivity and Hall coefficients determined. Both n ‐ and p ‐type lead telluride have been produced, but they were not of high resistivity. Charge carrier concentration in every case has been . Hall mobility of n ‐ and p ‐type carriers was found to be about 2240 and 860 cm 2 /volt‐sec, respectively. Material of p ‐type was converted to n ‐type by allowing lead to diffuse into the crystal at 500°C. The value of the diffusion coefficient of Pb in at this temperature is estimated to lie between .
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Edward L. Brady (1954) studied this question.