Characterization of Ion Implanted Silicon Annealed with a Graphite Radiation Source

A Varian IA-200 isothermal annealer has been used to anneal ion implantation damage and electrically activate dopants in As and B implanted silicon with minimal redistribution of the impurity. The anneal occurs in vacuum using infrared radiation from a resistively heated sheet of graphite. Good quality anneals of /sup 11/B implanted samples have been obtained with minimal boron diffusion. Arsenic implanted wafers have also be annealed with excellent results except for a substantial loss of As which occurs unless the wafer has an SiO/sub 2/ cap. The anneal quality of (100) wafers was independent of dose, however, the anneal quality of the (111) wafers improved with increasing As dose.