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Both pulsed and CW lasers have been used to anneal ion implanted single crystal silicon, polysilicon and ion implanted devices. The advantages and limitations of each type of laser and laser processing in general is discussed. Our results and those in the literature are compared to conventional thermal anneals. The thermal stability of ion-implanted, laser-annealed, single crystal silicon and polysilicon is reported.
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Wilson et al. (1981) studied this question.
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