Influence of dislocation density and carbon impurities in i-GaN layer on the performance of Schottky barrier ultraviolet photodetectors, Linkai, Yi, Haoran, Qi, Jialin, Huang, Mei, Zhou, Degang, Zhao, Desheng, Jiang, Jing, Yang, Wei, Liu, Feng, Liang
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Yi et al. (2018) studied this question.
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