The fabrication and characterisation of back-illuminated solar blind AlGaN metal-semiconductor-metal photodetectors is reported. The dark current of 40 × 40 µm devices is lower than the instrument measurement limitation of 20 fA for a bias < 100 V. The external quantum efficiency is as high as 48% and the spectral response shows a sharp band edge drop-off at ~280 nm.
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Yang et al. (2000) studied this question.
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