Relocation of Si atoms in kilo-electron-volt and mega-electron-volt Si-ion irradiation of crystalline Si

Ion-beam mixing of tracer ³⁰Si impurity in crystalline Si sample, irradiated with 2.0×{}10¹⁶ 100-keV and 2.0×{}10¹⁷ 4-MeV ²⁸Si/cm² at room temperature, has been investigated in order to obtain knowledge about the displacement processes in ion bombardment of Si. The tracer ³⁰Si impurity was deposited by implanting a fluence of 1×{}10¹⁶ 10-keV ³⁰Si/cm² into Si(100) substrates. The mixing of the collisionally similar and chemically identical atoms was studied with the nuclear-resonance-broadening technique. In the simulation of the experimental data, the collisional mixing was described with a new computational method and analytical calculation. The results suggest that the collisional mixing is a dominant contribution to displacement processes in room-temperature ion bombardment of crystalline Si.