Determination of Nitrogen Doping Concentration in Doped 4H-SiC Epilayers by Low Temperature Photoluminescence

A complete calibration of nitrogen concentration in doped 4H-SiC material is presented. This is done in the very large range of doping available today, i.e. from low 10 14 to 10 19 cm -3 . The samples are 4H-SiC films fabricated by hot-wall chemical vapour deposition. Low temperature photoluminescence is used as the experimental tool. For doping concentrations less than 8 × 10 17 cm -3 comparison between the intensity of various luminescence lines is used, whereas for doping higher than 3 × 10 18 cm -3 the energy position of an observed broad band allows the determination of the doping level.