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The intensity of impurity and intrinsic luminescence lines reflects the impurity doping concentration. A calibration procedure is presented for the nitrogen impurity in 6H–SiC. The calibration is valid for a large range of n-type doping from 1014 to 1016 cm−3. Effects of excitation density, temperature during the photoluminescence experiments as well as the observation of acceptor related lines are discussed.
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Henry et al. (1994) studied this question.
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