In Part I (see previous paper) the results of a series of experiments demonstrated that self-interstitial atoms (SIAs) were immobile at an irradiation temperature of 15°K, and that these same SIAs subsequently underwent long-range migration at temperatures as low as ∼ 28°K. In this paper we analyse these results quantitatively, and obtain approximate values of the diffusion coefficient [⋍ 0.22 exp (− 0.85 ev/kT) cm2 sec−1], and the enthalpy change of migration of the SIA (∼ 0.085 ev). The effect of the electric field on the diffusivity of a single SIA was considered, and it was shown that the volume change of migration for a SIA must have been ≲ 0.1 atomic volume. The problems of SIA clustering and the formation of SIA-impurity atom clusters were considered and were shown to be possible sources of the broad annealing spectrum reported in Part I. In addition the relationship of the post-anneal field evaporation experiments to the 2-interstitial recovery model was discussed. Finally, the present experiments were compared with other Stage I recovery data on irradiated tungsten.
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Scanlan et al. (1971) studied this question.
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