The epitaxial growth kinetics of Si(001) are investigated by the application of a Monte Carlo simulation, with explicit incorporation of the anisotropic bonding induced by the (2×{}1) dimer reconstruction. The model produces a pseudobilayer growth mode on a single-domain substrate and resolves apparently contradictory observations of Si homoepitaxial growth reported earlier by different groups.
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Wilby et al. (1989) studied this question.
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