What question did this study set out to answer?

To investigate radiation defect formation and cluster dynamics induced by fast-pile neutrons in n-type silicon containing low versus high oxygen concentrations.

May 9, 2006physica status solidi (b)

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

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Authors

ADA. P. DolgolenkoNational Academy of Sciences of Ukraine ПЛП.Г. ЛитовченкоRussian Academy of Sciences MVM. D. Varentsov

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Implication

Comparative analysis reveals cluster-driven defect formation and Fermi level pinning in neutron-irradiated silicon, indicating oxygen-independent intrinsic carrier degradation.

Key Points

To investigate radiation defect formation and cluster dynamics induced by fast-pile neutrons in n-type silicon containing low versus high oxygen concentrations.
Measured effective carrier concentrations and defect energy levels in n-type silicon across varying oxygen concentrations following fast-pile neutron irradiation.
Modeled defect cluster overlapping and n-to-p conductivity type conversion using an updated formulation of Gossick's model.
The neutron fluence at which carrier concentration converges to the intrinsic value occurs independently of oxygen concentration.
Divacancy and di-interstitial defect congestions pin the Fermi level near the midgap at high radiation fluences.
Defect levels of Vξ in the forbidden band show an energy shift of ΔE = 0.33/ξ (for 1 ≤ ξ ≤ 5) upon capturing a first or second electron.

Cite This Study

Dolgolenko et al. (2006) studied this question.

synapsesocial.com/papers/6a93a66d1eecaf8548721218 https://doi.org/10.1002/pssb.200541074

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Implication

Comparative analysis reveals cluster-driven defect formation and Fermi level pinning in neutron-irradiated silicon, indicating oxygen-independent intrinsic carrier degradation.

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

Discussion

Member takes

Implication

Key Points

Cite This Study

Particularities of the formation of radiation defects in silicon with low and high concentrations of oxygen

Discussion

Member takes

Implication

Key Points

Cite This Study

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