Temperature dependence of the width of the deep-level band in silicon with a high concentration of defects

Temperature dependences of the peak location and the half-width of the absorption band related to neutral divacancies in the spectrum of Si irradiated with neutrons at a dose of 10 19 cm −2 were studied. The results were analyzed in terms of the concept of the defect-level band, whose width depends on the degree of compensation and on temperature.